2n5060 thru 2N5064 silicon controlled rectifier 0.8 amp, 30 thru 200 volts to-92 case central semiconductor corp. tm r4 (25-august 2004) description: the central semiconductor 2n5060 series types are epoxy molded silicon controlled rectifiers designed for control systems and sensing circuit applications. marking code: full part number maximum ratings: (t c =25c unless otherwise noted) symbol 2n5060 2n5061 2n5062 2n5063 2N5064 units peak repetitive off-state voltage v drm, v rrm 30 60 100 150 200 v rms on-state current (t c =60c) i t(rms) 0.8 a peak one cycle surge i tsm 10 a peak forward gate current (tp=20s) i gm 1.0 a peak reverse gate voltage v gm 5.0 v peak gate power dissipation p gm 2.0 w average gate power dissipation (t=20s) p g (av) 0.1 w storage temperature t stg -40 to +150 c junction temperature t j -40 to +125 c electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i drm, i rrm rated v drm, v rrm, r gk =1k ? 1.0 a i drm, i rrm rated v drm , v rrm , t c =125c, r gk =1k ? 50 a i gt v d =7.0v, r l =100 ?, r gk =1k ? 200 a i gt v d =7.0v, r l =100 ?, r gk =1k ?, t c =-65c 350 a i h r gk =1k ? 5.0 ma i h r gk =1k ?, t c =-65c 10 ma v gt v d =7.0v, r l =100 ? 0.8 v v gt v d =7.0v, r l =100 ?, t c =-65c 1.2 v v gt v d =7.0v, r l =100 ?, t c =125c 0.1 v v tm i tm =1.2a 1.7 v dv/dt v d =0.67v x v drm, t c =125c, r gk =1k ? 30 v/s t q v d =0.67v x v drm, t c =125c, r gk =1k ? 200 s
min max min max a (dia) 0.175 0.205 4.45 5.21 b 0.170 0.210 4.32 5.33 c 0.500 - 12.70 - d 0.016 0.022 0.41 0.56 e f g 0.125 0.165 3.18 4.19 h 0.080 0.105 2.03 2.67 i to-92 (rev: r1) 0.015 0.38 dimensions symbol inches millimeters 0.100 2.54 0.050 1.27 central semiconductor corp. tm to-92 case - mechanical outline 2n5060 thru 2N5064 silicon controlled rectifier 0.8 amp, 30 thru 200 volts r4 (25-august 2004) lead code: 1) cathode 2) gate 3) anode marking code: full part number
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